Kanako Shojiki

We are conducting research on crystal growth of thin films of III-V nitride semiconductors composed of group III elements such as Al, Ga, and In and group V elements such as N, and their optical device applications.
In order to improve the efficiency of conventional light emitting devices such as light emitting diodes and laser diodes in the visible to deep ultraviolet wavelength region, growth of nitride semiconductor thin films with low defect densities by a combination of metal organic vapor phase epitaxy (MOVPE), sputtering, and high-temperature annealing methods are conducted. In addition, their structural and optical properties are evaluated.
I am also interested in the optical properties that can be expressed or revealed by adding nano- and microstructures. I would like to propose and demonstrate optical devices utilizing such attractive properties of semiconductors that have not been actively utilized so far. As one of our research projects, we aim to fabricate and demonstrate single photon sources and quantum entangled photon sources, which are quantum optical devices based on quantum dots, photonic crystals, and crystal polarity inversion structures of III-V nitride semiconductors.